150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263

Product Details
Customization: Available
Application: Power Switch Circuit
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
  • 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
  • 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
  • 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
  • 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
  • 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
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Basic Info.

Model NO.
DSE090N15N3A
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
Dse090n15n3a
Package
to-263
Type
N-Type Semiconductor
Voltage
150V
Current
115A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
PARAMETER SYMBOL VALUE UNIT
Drian-to-Source Voltage VDSS 150 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) (Tc=25ºC) 115 A
(Tc=100ºC) 81 A
Drain Current(Pulsed) IDM 460 A
Single Pulse Avalanche Energy EAS 400 mJ
Total Dissipation Ta=25ºC Ptot 2.3 W
TC=25ºC Ptot 231 W
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Features
AEC-Q101 qualified
Extremely low on-resistance RDS(on)
175°C operating temperature
Pb-Free plating / Halogen-Free / RoHS compliant
100% avalanche screened
100% ΔVDS test
Applications
Motor Control and Drive
Charge/Discharge for Battery Management System
Synchronous Rectifier for SMPS
Automotive applications
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DSE090N15N3A
To-263
DSE090N15N3A
Pb-free REEL 4000/box
 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263

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