Manufacturing Technology: | Discrete Device |
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Material: | Silicon |
Type: | N-type Semiconductor |
Samples: |
IGBT
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | RATING | UNIT | ||
Collector-Emitter Voltage | VCES | 650 | V | ||
Gate- Emitter Voltage | VGES | ±30 | V | ||
Collector Current | IC(T=25ºC) | 160 | A | ||
Collector Current | (Tc=100ºC) | 80 | A | ||
Pulsed Collector Current | ICM | 240 | A | ||
Diode Continuous Forward Current | IF @TC = 100 °C | 80 | A | ||
Diode Pulsed Current |
IFM
|
440 | A | ||
Total Dissipation | TC=25ºC | PD | 220 | W | |
TC=100ºC | PD | 155 | W | ||
Junction Temperature | Tj | -45~175 | ºC | ||
storage Temperature | Tstg | -45~150 | ºC |
Features |
FS Trench Technology, Positive temperature
coefficient
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Low saturation voltage: VCE(sat), typ = 1.8V
@ IC =80A and Tj = 25°C
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Extremely enhanced avalanche capability
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Applications |
Welding |
Three-level inverter |
UPS |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DGC80F65M | TO-247 | DGC80F65M | Pb-free | Tube | 1000/box |
Suppliers with verified business licenses