60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn

Product Details
Customization: Available
Application: Welding, UPS
Batch Number: 2023
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Number of Employees
234
Year of Establishment
2004-12-07
  • 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
  • 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
  • 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
  • 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
  • 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
  • 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
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Basic Info.

Model NO.
DHG60T65D
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Dhg60t65D
Package
to-3pn
Type
N-Type Semiconductor
Voltage
650V
Current
60A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 650 V
Gate- Emitter Voltage VGES ±20 V
Collector Current  (TJ=100ºC) 60 A
Pulsed Collector Current ICM 180 A
Diode Continuous Forward Current I@TJ = 100 °C 30 A
Diode Pulsed Current
IFM
180 A
Total Dissipation TC=25ºC
Ptot
406 W
TC=100ºC
Ptot
163 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 1.85V
@ IC =60A and Tj = 25°C
Extremely enhanced avalanche capability
Applications
Welding
Aircondition
UPS
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHG60T65D
TO-3PN
DHG60T65D
Pb-free Tube 1000/box
 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn

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