30A 200V Schottky Barrier Diode Hmbr30200CT to-220

Product Details
Customization: Available
Voltage: 200V
Current: 30A
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Number of Employees
234
Year of Establishment
2004-12-07
  • 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
  • 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
  • 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
  • 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
  • 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
  • 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
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Basic Info.

Model NO.
HMBR30200CT
Manufacturing Technology
Discrete Device
Type
N-type Semiconductor
Material
Silicon
Package
to-220
Application
Switching Power Supply
Model
Hmbr30200CT
Batch Number
2021
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

30A 200V Schottky Barrier Diode Hmbr30200CT to-22030A 200V Schottky Barrier Diode Hmbr30200CT to-22030A 200V Schottky Barrier Diode Hmbr30200CT to-22030A 200V Schottky Barrier Diode Hmbr30200CT to-220
Features
High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Applications
converters
free-wheeling diodes
reverse battery protection
Typical applications are in switching power
 
PARAMETER SYMBOL VALUE UNIT
 
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
DC Blocking Voltage VR 200 V
Average Rectified Forward Current(single) TC=120ºC IF(AV) 15 A
Average Rectified Forward Current(double) TC=120ºC IF(AV) 30 A
Repetitive Peak Surge Current(single) IFRM 20 A
Nonrepetitive Peak Surge Current(single) t=8.3ms IFSM 150 A
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
HMBR30200CT TO-220 HMBR30200CT Pb-free Tube 1000/box
 30A 200V Schottky Barrier Diode Hmbr30200CT to-220

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