180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DSE026N10NA
• Package: to-263
• Application: Power Switch Circuit
• Model: Dse026n10na
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 100V
• Current: 180A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
Drian-to-Source Voltage		VDSS	100		V
Gate-to-Source Voltage		VGSS	±20		V
Drain Current(continuous)		(Tc=25ºC)
		(Tc=25ºC)	8		A
		(Tc=100ºC)	5		A
Drain Current(Pulsed)		IDM	32		A
Single Pulse Avalanche Energy		EAS	440		mJ
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	100	35	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

AEC-Q101 qualified

Applications

Synchronous rectification in SMPS

Hard switching and high speed circuit

Power tools

UPS

Motor control

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DSE026N10NA	TO-263	DSE026N10NA	Pb-free	Tape & Reel	800/box