Customization: | Available |
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Manufacturing Technology: | Discrete Device |
Type: | P-Type Semiconductor |
Shipping Cost: | Contact the supplier about freight and estimated delivery time. |
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PARAMETER | SYMBOL |
|
UNIT | |||
Drian-to-Source Voltage | VDSS | 85 | V | |||
Gate-to-Source Voltage | VGSS | ±20 | V | |||
Drain Current(continuous) | ID(T=25ºC) | 130 | A | |||
(T=100ºC) | 92 | A | ||||
Drain Current(Pulsed) | IDM | 520 | A | |||
Single Pulse Avalanche Energy | EAS | 729 | mJ | |||
Total Dissipation | Ta=25ºC | Ptot | 2 | W | ||
TC=25ºC | Ptot | 136 | W | |||
Junction Temperature | Tj | -55~175 | ºC | |||
storage Temperature | Tstg | -55~175 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
High avalanche current
|
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Synchronous rectification in SMPS
|
Hard switching and high speed circuit
|
Power tools
|
UPS
|
Motor control
|
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DSP038N08NA
|
DFN5X6 |
DSP038N08NA
|
Pb-free | REEL | 6000/box |