Customization: | Available |
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Application: | Power Switching Applications |
Batch Number: | 2021 |
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PARAMETER | SYMBOL | VALUE | UNIT | |||
Drian-to-Source Voltage | VDSS | 800 | V | |||
Gate-to-Drian Voltage | VGSS | ±30 | V | |||
Drain Current(continuous) | ID(T=25ºC) | 5 | A | |||
(T=100ºC) | 3 | A | ||||
Drain Current(Pulsed) | IDM | 20 | A | |||
Single Pulse Avalanche Energy | EAS | 230 | mJ | |||
Total Dissipation | Ta=25ºC | Ptot | 0.28 | W | ||
TC=25ºC | Ptot | 35 | W | |||
Junction Temperature | Tj | -55~150 | ºC | |||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
ESD improved capability
|
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
used in various power switching circuit for system miniaturization and higher efficiency. |
Power switch circuit of electron ballast and adaptor. |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
F5N80
|
TO-220F |
F5N80
|
Pb-free | PIPE | 1000/box |