600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: D7N60
• Package: to-252
• Application: Power Switching Circuit
• Model: D7n60
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 600V
• Current: 7A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			7N60/I7N60/E7N60/B7N60/D7N60	F7N60
Maximum Drian-Source DC Voltage		VDS	600		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	7		A
		(T=100ºC)	4.4		A
Drain Current(Pulsed)		IDM	28		A
Single Pulse Avalanche Energy		EAS	400		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	100	35	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD Improved Capability

Low ON Resistance(Rdson≤1.3Ω)

Low Gate Charge(Typ: 24nC)

Low Reverse Transfer Capacitances(Typ: 5.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

 

Applications

used in various power switching circuit for system
miniaturization and higher efficiency.

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
7N60	TO-220C	7N60	Pb-free	Tube	1000/box
F7N60	TO-220F	F7N60	Pb-free	Tube	1000/box
B7N60	TO-251	B7N60	Pb-free	Tube	1000/box
D7N60	TO-252	D7N60	Pb-free	Tape & Reel	2500/box
I7N60	TO-262	I7N60	Pb-free	Tube	1000/box
E7N60	TO-263	E7N60	Pb-free	Tape & Reel	800/box