Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | ||
DHS110N15/DHS110N15I/DHS110N15E | DHS110N15F | ||||
Drian-to-Source Voltage | VDSS | 150 | V | ||
Gate-to-Source Voltage | VGSS | ±20 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 52 | A | ||
(T=100ºC) | 37 | A | |||
Drain Current(Pulsed) | IDM | 207 | A | ||
Single Pulse Avalanche Energy | EAS | 600 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
TC=25ºC | Ptot | 150 | 33 | W | |
Junction Temperature | Tj | -55~175 | ºC | ||
storage Temperature | Tstg | -55~175 | ºC |
Features |
Low on resistance |
Low reverse transfer capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Pb-Free plating / Halogen-Free / RoHS compliant
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Applications |
Power switching applications |
DC-DC converters
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Full bridge control
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Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHS110N15 | TO-220C | DHS110N15 | Pb-free | Tube | 1000/box |
DHS110N15F | TO-220F | DHS110N15F | Pb-free | Tube | 1000/box |
DHS110N15I | TO-262 | DHS110N15I | Pb-free | Tube | 1000/box |
DHS110N15E | TO-263 | DHS110N15E | Pb-free | Tape & Reel | 800/box |
Suppliers with verified business licenses