40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: G40T65LBBN
• Package: to-3pn
• Application: Power Switching Circuit
• Model: G40t65lbbn
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 650V
• Current: 40A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE	UNIT
Maximum Drian-Source DC Voltage		VDS	650	V
Maximum Gate-Drain Voltage		VGS	±20	V
Drain Current(continuous)		ID(T=25ºC)	80	A
		(T=100ºC)	40	A
Drain Current(Pulsed)		IDM	120	A
Single Pulse Avalanche Energy		EAS	90	mJ
Total Dissipation	Ta=25ºC	Ptot	417	W
	TC=25ºC	Ptot	208	W
Junction Temperature		Tj	-55~175	ºC
storage Temperature		Tstg	-55~175	ºC

 

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: VCE(sat), typ = 1.8V@ IC =40A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

UPS

Three-level Inverter

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G40T65LBBN	TO-3PN	G40T65LBBN	Pb-free	PIPE	1000/box