• 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
  • 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
  • 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
  • 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
  • 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
  • 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b

Application: Power Switching Applications
Batch Number: 2023
Certification: RoHS
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
| Order Sample
Mosfet
Customization:
Shipping Cost:

Estimated freight per unit.

about shipping cost and estimated delivery time.
Payment Method: visa mastercard discover JCB diners club american express T/T
  Initial Payment Full Payment
Currency: US$
Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
From payment to delivery, we protect your trading.
40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b pictures & photos
40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company

Basic Info.

Model NO.
DHD80N03
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
DHD80n03
Package
to-252b
Type
N-Type Semiconductor
Voltage
30V
Current
40A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
PARAMETER SYMBOL VALUE UNIT
DHB80N03/DHD80N03
Drian-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) ID(T=25ºC)  (Silicon limit) 76  
ID(T=25ºC) (Package limit) 40 A
(T=100ºC)  (Package limit) 40 A
Drain Current(Pulsed) IDM 160 A
Single Pulse Avalanche Energy EAS 169 mJ
Total Dissipation Ta=25ºC Ptot 1.9 W
Tc=25ºC Ptot 65 W
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Automotive electronics
Inverter management system
Power tools
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHD80N03 TO-252B DHD80N03 Pb-free Reel 2500/Reel/ 5000/small box/
25000/big box
 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now

You Might Also Like

From payment to delivery, we protect your trading.
40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b pictures & photos
40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07