10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: F10N80
• Package: to-220f
• Application: Power Switching Circuit
• Model: F10n80
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 800V
• Current: 10A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			10N80/I10N80/E10N80	F10N80
Maximum Drian-Source DC Voltage		VDS	800		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	10		A
		(T=100ºC)	6.3		A
Drain Current(Pulsed)		IDM	40		A
Single Pulse Avalanche Energy		EAS	700		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	160	80	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance 

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

Applications

LED power switch circuit

Electronic ballast

Switch mode power supply

Electronic transformer

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
10N80	TO-220C	10N80	Pb-free	Tube	1000/box
F10N80	TO-220F	F10N80	Pb-free	Tube	1000/box
I10N80	TO-262	I10N80	Pb-free	Tube	1000/box
E10N80	TO-263	E10N80	Pb-free	Tape & Reel	800/box