65A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
Features |
High Blocking Voltage with Low On-Resistance |
High Speed Switching with Low Capacitance |
Easy to Parallel and Simple to Drive |
Applications |
Power Supplies |
High Voltage DC/DC Converters |
Motor Drives |
Switch Mode Power Supplies |
Pulsed Power applications |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
Drian-to-Source Voltage |
VDSS |
1200 |
V |
Gate-to-Source Voltage max |
VGSS |
-10/+25 |
V |
Gate-to-Source Voltage max |
VGSS |
-5/+20 |
V |
Continuous Drain Current |
ID TC=25ºC |
65 |
A |
TC=100ºC |
43 |
A |
Pulsed Drain Current |
IDM |
200 |
A |
Power Dissipation |
Tj=150ºC |
Ptot |
370 |
W |
TC=25ºC |
Ptot |
W |
Junction Temperature Range |
Tj |
-55~150 |
ºC |
Storage Temperature Range |
Tstg |
-55~150 |
ºC |
4.2 Thermal Characteristics
Parameter |
Symbol |
Rating |
Unitº |
Thermal Resistance,Junction to Case-sink |
RthJC |
0.25 |
ºC/W |
Thermal Resistance,Junction to Ambient |
RthJA |
40 |
ºC/W |
Product Specifications and Packaging Models |
Product Model |
Package Type |
Mark Name |
RoHS |
Package |
Quantity |
DHC1M040120D |
TO-3P |
DHC1M040120D |
Pb-free |
Tube |
300/box |
DHC1M040120B |
TO-247 |
DHC1M040120B |
Pb-free |
Tube |
300/box |