1200V 65A N-Channel Sic Power Mosfet to-3p Dhc1m025120d
|
Still deciding? Get samples of $ !
Order Sample
|
Product Details
| Customization: | Available |
|---|---|
| Application: | Solar Inverters |
| Batch Number: | 2022 |
Shipping
| Shipping Cost: | Contact the supplier about freight and estimated delivery time. |
|---|
Payment Guarantee
| Payment Methods: |
|
|---|---|
| Support payments in USD |
| Secure payments: | Every payment you make on Made-in-China.com is protected by the platform. |
|---|
| Refund policy: | Claim a refund if your order doesn't ship, is missing, or arrives with product issues. |
|---|
Secured Trading Service
Diamond Member Since 2021
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
Year of Establishment
2004-12-07
Number of Employees
234
Find Similar Products
Basic Info.
- Model NO.
- DHC1M025120D
- Manufacturing Technology
- Discrete Device
- Material
- Sic
- Model
- Dhc1m025120d
- Package
- to-3p
- Type
- N-Type Semiconductor
- Voltage
- 1200V
- Current
- 65A
- Brand
- Wxdh
- Transport Package
- Tube
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541100000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Product Description



65A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
| Features |
| High Blocking Voltage with Low On-Resistance |
| High Speed Switching with Low Capacitance |
| Easy to Parallel and Simple to Drive |
| Applications |
| Power Supplies |
| High Voltage DC/DC Converters |
| Motor Drives |
| Switch Mode Power Supplies |
| Pulsed Power applications |
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Drian-to-Source Voltage | VDSS | 1200 | V | |||
| Gate-to-Source Voltage max | VGSS | -10/+25 | V | |||
| Gate-to-Source Voltage max | VGSS | -5/+20 | V | |||
| Continuous Drain Current | ID TC=25ºC | 65 | A | |||
| TC=100ºC | 43 | A | ||||
| Pulsed Drain Current | IDM | 200 | A | |||
| Power Dissipation | Tj=150ºC | Ptot | 370 | W | ||
| TC=25ºC | Ptot | W | ||||
| Junction Temperature Range | Tj | -55~150 | ºC | |||
| Storage Temperature Range | Tstg | -55~150 | ºC | |||
4.2 Thermal Characteristics
| Parameter | Symbol | Rating | Unitº |
| Thermal Resistance,Junction to Case-sink | RthJC | 0.25 | ºC/W |
| Thermal Resistance,Junction to Ambient | RthJA | 40 | ºC/W |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHC1M040120D | TO-3P | DHC1M040120D | Pb-free | Tube | 300/box |
| DHC1M040120B | TO-247 | DHC1M040120B | Pb-free | Tube | 300/box |
Send your message to this supplier
People who viewed this also viewed
Find Similar Products By Category
- Supplier Homepage
- Products
- SIC MOSFET
- 1200V 65A N-Channel Sic Power Mosfet to-3p Dhc1m025120d
Related Categories
Hot Searches
More