Customization: | Available |
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Application: | Power Switch Circuit |
Batch Number: | 2021 |
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PARAMETER | SYMBOL | VALUE | UNIT | |
F4N65 | ||||
Drian-Source Voltage | VDSS | 650 | V | |
Gate-to-Source Voltage | VGSS | ±30 | V | |
Drain Current(continuous) | ID(T=25ºC) | 4 | A | |
(T=100ºC) | 2.5 | A | ||
Drain Current(Pulsed) | IDM | 16 | A | |
Single Pulse Avalanche Energy | EAS | 240 | mJ | |
Total Dissipation | Ta=25ºC | Ptot | 0.24 | W |
TC=25ºC | Ptot | 30 | W | |
Junction Temperature | Tj | -55~150 | ºC | |
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
ESD improved capability |
Low on resistance(Rdson≤2.5Ω)
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Low gate charge(Typ: 17.3nC)
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Low reverse transfer capacitances(Typ: 6.88pF)
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100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Used in various power switching circuit for system miniaturization and higher efficiency. |
Power switch circuit of electron ballast and adaptor.
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Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
F4N65 | TO-220F | F4N65 | Pb-free | Tube | 1000/box; 5000/big box |