10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220

Product Details
Customization: Available
Application: Diode, Switching Power Supply
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
  • 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
  • 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
  • 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
  • 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
  • 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
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Basic Info.

Model NO.
MBR10R100CT
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Mbr10r100CT
Package
to-220
Type
P-Type Semiconductor
Voltage
100V
Current
10A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

10A 100V Low Schottky Barrier Diode Mbr10r100CT to-22010A 100V Low Schottky Barrier Diode Mbr10r100CT to-22010A 100V Low Schottky Barrier Diode Mbr10r100CT to-220 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
Features
High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
 
PARAMETER SYMBOL VALUE UNIT
 
Peak Repetitive Reverse Voltage VRRM 100 V
DC Blocking Voltage VR 100 V
Average Rectified Forward Current(single) TO-220,TC=120ºC
TO-220F,TC=90ºC
IF(AV) 5 A
Average Rectified Forward Current(double) 10 A
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
MBR10R100CT TO-220 MBR10R100CT Pb-free Tube 1000/box
MBRF10R100CT TO-220F MBRF10R100CT Pb-free Tube 1000/box
 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220

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