68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L

Product Details
Customization: Available
Application: Power Supplies
Batch Number: 2023
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Number of Employees
234
Year of Establishment
2004-12-07
  • 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
  • 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
  • 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
  • 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
  • 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
  • 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
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Basic Info.

Model NO.
DCCF080M120A2
Manufacturing Technology
Discrete Device
Material
Sic
Model
Dccf080m120A2
Package
to-247-4L
Type
N-Type Semiconductor
Voltage
1200V
Current
68A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
 68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL Test Conditions VALUE UNIT
     
Drian-to-Source Voltage VDSmax VGS=0V, ID=100μA 1200 V
Gate-to-Source Voltage max VGSmax Absolute maximum values -10/+25 V
Gate-to-Source Voltage max VGSS Recommended operational values -5/+20 V
Continuous Drain Current ID TC=25ºC VGS=20V,TC=25ºC 36 A
TC=100ºC VGS=20V,TC=100ºC 24 A
Pulsed Drain Current IDM Pulse width tp limited by TJmax 80 A
Power Dissipation   Ptot Tc=25ºC, TJ=150ºC 192 W
  Ptot Tc=25ºC, TJ=150ºC W
Junction Temperature Range Tj   -55~150 ºC
Storage Temperature Range Tstg   -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.6 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCC080M120A TO-247-3L DCC080M120A Pb-free Tube 300/box
DCCF080M120A TO-247-4L DCCF080M120A Pb-free Tube 300/box
 68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L

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