4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: B4N80
• Package: to-251b
• Application: Power Switching Applications
• Model: B4n80
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 800V
• Current: 4A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			B4N80
Drian-to-Source Voltage		VDSS	800		V
Gate-to-Drian Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	4		A
		(T=100ºC)	2.5		A
Drain Current(Pulsed)		IDM	16		A
Single Pulse Avalanche Energy		EAS	153		mJ
Total Dissipation	Ta=25ºC	Ptot	1.3		W
	TC=25ºC	Ptot	150		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

Applications

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
B4N80	TO-251B	B4N80	Pb-free	PIPE	3000/box