600A 1200V Half Bridge Module IGBT Module Dgd600h120L2t Econodual3 Package

• Customization: Available
• Application: Welding, UPS, Three-Leve Inverter
• Batch Number: 2024
• Model NO.: DGD600H120L2T
• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Model: Dgd600h120L2t
• Package: Econodual3
• Type: N-Type Semiconductor
• Brand: Wxdh
• Transport Package: Box
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 25.00cm * 30.00cm
• Package Gross Weight: 20.000kg

Product Description

 
1 Description

These Insulated Gate Bipolar Transistor used advanced trench and

Fieldstop technology design, provided excellent VCEsat and switching

speed ,low gate charge. Which accords with the RoHS standard

Features

FS Trench Technology, Positive temperature
coefficient

Low saturation voltage: VCE(sat), typ = 2.25V
@ IC =75A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

UPS

Three-leve Inverter

AC and DC servo drive amplifier

 

Type	VCE	IC	VCEsat,Tj=25ºC	Tjop	Package
DGD600H120L2T	1200V	600A (Tj=100ºC)	1.79V (Typ)	150ºC	EconoDUAL3

Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Collector-to-Emitter Voltage			VCE	1200		V
Gate-to-Emitter Voltage			VGE	±25		V
DC Collector current			Ic Tj=100ºC	600		A
Pulsed Collector Current #1			ICM	1200		A

 

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT
Peak Repetitive Reverse Voltage			VRRM	1200		V
DC Blocking Voltage			VR	1200		V
Average Rectified Forward Current			IF(AV)	600		A
Repetitive Peak Surge Current			IFRM	1200		A

5.53IGBT Module

PARAMETER			SYMBOL	VALUE		UNIT
Junction Temperature Range			Tjmax	-40~175		ºC
Operating Junction Temperature			Tjop	-40~175		ºC
Storage Temperature Range			Tstg	-40~175		ºC
Isolation Voltage RMS,f=50Hz,t=1min			VISO	3500		A

5.4Thermal Characteristics(IGBT Module)

PARAMETER						SYMBOL	VALUE		UNIT
Thermal Resistance Junction to Case						IGBT RthJC	0.033		ºC/W
						Diode RthJC	0.065		ºC/W