68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c

Product Details
Customization: Available
Application: Power Switching, Converters, Full Bridge Control
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
  • 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
  • 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
  • 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
  • 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
  • 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
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Basic Info.

Model NO.
DTG080N07N
Material
Metal-Oxide Semiconductor
Model
DTG080n07n
Package
to-252b
Type
N-Type Semiconductor
Voltage
68V
Current
80A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 25.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
PARAMETER SYMBOL VALUE UNIT
Drian-to-Source Voltage VDSS 68 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) ID(T=25ºC) 80 A
(T=100ºC) 51 A
Drain Current(Pulsed) IDM 320 A
Single Pulse Avalanche Energy EAS 289 mJ
Total Dissipation Ta=25ºC Ptot 1.7 W
TC=25ºC Ptot 89 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
High avalanche current
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter management system
Power tools
Automotive electronics
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DTG080N07N
TO-220c
DTG080N07N
Pb-free REEL 5000/box
 68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c

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