18A 650V N-Channel Enhancement Mode Power Mosfet F18n65 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: F18N65
• Package: to-220f
• Application: Power Switching Applications
• Model: F18n65
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 650V
• Current: 18A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			F18N65
Drian-to-Source Voltage		VDSS	650		V
Gate-to-Drian Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	18		0A
		(T=100ºC)	11		A
Drain Current(Pulsed)		IDM	72		A
Single Pulse Avalanche Energy		EAS	1500		mJ
Total Dissipation	Ta=25ºC	Ptot	0.36		W
	TC=25ºC	Ptot	45		W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low on resistance(Rdson≤1.0Ω)

Low gate charge(Typ: 32nC)

Low reverse transfer capacitances(Typ: 7.0pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

used in various power switching circuit for system
miniaturization and higher efficiency.

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
F18N65	TO-220F	F18N65	Pb-free	PIPE	1000/box