60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DGC60F65M
• Package: to-247
• Application: Welding, UPS
• Model: Dgc60f65m
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 650V
• Current: 60A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	650		V
Gate- Emitter Voltage		VGES	±30		V
Collector Current		IC(T=25ºC)	120		A
Collector Current		(Tc=100ºC)	60		A
Pulsed Collector Current		ICM	180		A
Diode Continuous Forward Current		IF @TC = 100 °C	60		A
Diode Pulsed Current		IFpuls	450		A
Total Dissipation	TC=25ºC	PD	428		W
	TC=100ºC	PD	214		W
Junction Temperature		Tj	-45~175		ºC
storage Temperature		Tstg	-45~175		ºC

 

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 1.9V
@ I_C =60A and Tj = 25 °

Extremely enhanced avalanche capabilityExtremely

Applications

Welding

Three-level inverter

UPS

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DGC60F65M	TO-247	DGC60F65M	Pb-free	Tube	300/box