| Customization: | Available |
|---|---|
| Application: | Power Switching Circuit |
| Batch Number: | 2024 |
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| PARAMETER | SYMBOL | VALUE | UNIT | ||
|
F8N65
|
|||||
| Drian-to-Source Voltage | VDSS | 650 | V | ||
| Gate-to-Drian Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 8 | A | ||
| (T=100ºC) | 5 | A | |||
| Drain Current(Pulsed) | IDM | 32 | A | ||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 0.28 | W | |
| TC=25ºC | Ptot | 35 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
|
ESD improved capability
|
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
|
F8N65
|
TO-220F |
F8N65
|
Pb-free | Tube | 1000/small box; 5000/big box |
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