11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DHDSJ11N65
• Package: to-252b
• Application: Power Supply
• Model: Dhdsj11n65
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 650V
• Current: 11A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65	DHFSJ11N65
Drian-to-Source Voltage		VDSS	650		V
Gate-to-Source Voltage		VGSS	±20		V
Drain Current(continuous)		ID(T=25ºC)	10.8		A
		(T=100ºC)	6.9		A
Drain Current(Pulsed)		IDM	33		A
Single Pulse Avalanche Energy		EAS	133		mJ
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	120	30	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Power factor correction(PFC).

Switched mode power supplies(SMPS).

Uninterruptible power supply(UPS).

TV power & LED Lighting Power

AC to DC Converters

Telecom

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHSJ11N65	TO-220	DHSJ11N65	Pb-free	Tube	1000/box
DHFSJ11N65	TO-220F	DHFSJ11N65	Pb-free	Tube	1000/box
DHBSJ11N65	TO-251	DHBSJ11N65	Pb-free	Tube	3000/box
DHDSJ11N65	TO-252	DHDSJ11N65	Pb-free	Tape & Reel	2500/box
DHISJ11N65	TO-262	DHISJ11N65	Pb-free	Tube	1000/box
DHESJ11N65	TO-263	DHESJ11N65	Pb-free	Tape & Reel	800/box