0.8A 600V N-Channel Enhancement Mode Power Mosfet D1n60 to-252

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: D1N60
• Package: to-252
• Application: Power Switching Circuit
• Model: D1n60
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 600V
• Current: 0.8A
• Transport Package: Tape & Reel
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			1N60/I1N60/E1N60/B1N60/D1N60	F1N60
Drian-Source Voltage		VDS	600		V
Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	0.8		A
		(T=100ºC)	0.6		A
Drain Current(Pulsed)		IDM	3.2		A
Single Pulse Avalanche Energy		EAS	20		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	25	12	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance(Rdson≤15Ω)

Low Gate Charge(Typ: 4nC)

Low Reverse Transfer Capacitances(Typ: 2.6pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
1N60	TO-220C	1N60	Pb-free	Tube	1000/box
F1N60	TO-220F	F1N60	Pb-free	Tube	1000/box
B1N60	TO-251	B1N60	Pb-free	Tube	3000/box
D1N60	TO-252	D1N60	Pb-free	Tape & Reel	2500/box
I1N60	TO-262	I1N60	Pb-free	Tube	1000/box
E1N60	TO-263	E1N60	Pb-free	Tape & Reel	800/box