600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 10N60
• Package: to-220
• Application: Power Switching Circuit
• Model: 10n60
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 600V
• Current: 10A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			10N60/I10N60/E10N60	F10N60
Maximum Drian-Source DC Voltage		VDS	600		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	10		A
		(T=100ºC)	6.3		A
Drain Current(Pulsed)		IDM	40		A
Single Pulse Avalanche Energy		EAS	580		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	130	40	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance(Rdson≤0.9Ω)

Low Gate Charge(Typ: 32nC)

Low Reverse Transfer Capacitances(Typ: 7.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
10N60	TO-220C	10N60	Pb-free	Tube	1000/box
F10N60	TO-220F	F10N60	Pb-free	Tube	1000/box
I10N60	TO-262	I10N60	Pb-free	Tube	1000/box
E10N60	TO-263	E10N60	Pb-free	Tape & Reel	800/box