| Customization: | Available |
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| Application: | Power Switching Circuit |
| Batch Number: | 2024 |
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| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Drian-to-Source Voltage | VDSS | 100 | V | ||
| Gate-to-Drian Voltage | VGSS | ±20 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 180 | A | ||
| (T=100ºC) | 127 | A | |||
| Drain Current(Pulsed) | IDM | 720 | A | ||
| Single Pulse Avalanche Energy | EAS | 812 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2.3 | W | |
| TC=25ºC | Ptot | 214 | W | ||
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~175 | ºC | ||
| Features |
| Fast Switching |
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Low on resistance
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Low gate charge
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High avalanche current
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Low reverse transfer capacitances
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100% single pulse avalanche energy test
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100% ΔVDS test
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| Applications |
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Synchronous rectification in SMPS
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Hard switching and high speed circuit
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Power tools
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UPS
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Motor control
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