Manufacturing Technology: | Discrete Device |
---|---|
Material: | Silicon |
Type: | N-type Semiconductor |
Samples: |
Mosfet
|
---|
Customization: |
---|
Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
---|
Payment Method: | |
---|---|
Initial Payment Full Payment |
Currency: | US$ |
---|
Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
---|
Suppliers with verified business licenses
Features |
Low on resistance
|
Low reverse transfer capacitances
|
100% single pulse avalanche energy test
|
100% ΔVDS test Ciss@
|
Pb-Free plating / Halogen-Free / RoHS compliant
|
Applications |
Motor Control and Drive
|
Charge/Discharge for Battery Management System
|
Synchronous Rectifier for SMPS
|
Part #
|
Package
|
Marking
|
Tube/Reel
|
Qty(pcs)
|
DSD190N10L3
|
TO-252
|
DSD190N10L3
|
Reel
|
2500/box
|
DSB190N10L3
|
TO-251
|
DSB190N10L3
|
Tube
|
3000/box
|
PARAMETER | SYMBOL | VALUE | UNIT | ||
Drain-source voltage
|
VDS
|
100 | V | ||
Gate-Source voltage
|
VGS
|
±20
|
V | ||
Continuous drain current
|
TC = 25°C
|
ID
|
50 | A | |
TC = 100°C
|
35 | A | |||
Pulsed drain current (TC = 25°C, tp limited by Tjmax)
|
ID pulse
|
200 | A | ||
Avalanche energy, single pulse (L=0.5mH, Rg=25)
|
EAS
|
90 | MJ | ||
Power dissipation (TC = 25°C)
|
Ptot
|
68 | W | ||
Operating junction and storage temperature
|
Tj , T stg
|
-55~175 | ºC |
Suppliers with verified business licenses