4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: B4N60
• Package: to-251
• Application: Power Switch Circuit
• Model: B4n60
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 600V
• Current: 4A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			4N60/I4N60/E4N60/B4N60/D4N60	F4N60
Drian-Source Voltage		VDS	600		V
Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	4		A
		(T=100ºC)	2.5		A
Drain Current(Pulsed)		IDM	16		A
Single Pulse Avalanche Energy		EAS	250		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	75	30	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low ON Resistance(Rdson≤2.5Ω)

Low Gate Charge(Typ: 14.5nC)

Low Reverse Transfer Capacitances(Typ: 4pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
4N60	TO-220C	4N60	Pb-free	Tube	1000/box
F4N60	TO-220F	F4N60	Pb-free	Tube	1000/box
B4N60	TO-251	B4N60	Pb-free	Tube	3000/box
D4N60	TO-252	D4N60	Pb-free	Tape & Reel	2500/box
I4N60	TO-262	I4N60	Pb-free	Tube	1000/box
E4N60	TO-263	E4N60	Pb-free	Tape & Reel	800/box