Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | ||
Drian-to-Source Voltage | VDSS | 600 | V | ||
Gate-to-Drian Voltage | VGSS | ±20 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 30.7 | A | ||
(T=100ºC) | 19.4 | A | |||
Drain Current(Pulsed) | IDM | 92 | A | ||
Single Pulse Avalanche Energy | EAS | 588 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 2 | W | |
TC=25ºC | Ptot | 205 | W | ||
Junction Temperature | Tj |
-55~150
|
ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
Low ON Resistance(Rdson≤0.8Ω) |
Low Gate Charge(Typ: 40nC) |
Low Reverse Transfer Capacitances(Typ: 9.5pF) |
Built-in ESD Diode
|
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power factor correction(PFC).
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Switched mode power supplies(SMPS).
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Uninterruptible power supply(UPS).
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AC to DC Converters
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Telecom,Solar
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Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DJC099N60F
|
TO-247 |
DJC099N60F
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Pb-free | Tube | 1000/box |
Suppliers with verified business licenses