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| Customization: | Available |
|---|---|
| Manufacturing Technology: | Discrete Device |
| Type: | N-type Semiconductor |
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| Features |
| High junction temperature capabiliy |
| Low leakage current |
| Low thermal resistance |
| High frequency operation |
| Avalanche specification |
| Applications |
| Switching Power Supply |
| Power Switching Circuits |
| General Purpose |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Peak Repetitive Reverse Voltage | VRRM | 100 | V | ||
| RMS Reverse Voltage | VR(RMS) | 80 | V | ||
| DC Blocking Voltage | VR | 100 | V | ||
| Average Rectified Forward Current(single) | TC=120ºC |
IF(AV) | 15 | A | |
| Average Rectified Forward Current(double) | 30 | A | |||
| Repetitive Peak Surge Current(single) | IFRM | 20 | A | ||
| Nonrepetitive Peak Surge Current(single) | t=8.3ms | IFSM | 200 | A | |
| Avalanche Energy(single) | L=1mH | EAS | 32 | mJ | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| MBR30100NCT | TO-3PN | MBR30100NCT | Pb-free | Tube | 300/box |
| MBR30100BCT | TO-247 | MBR30100BCT | Pb-free | Tube | 300/box |
| MBR30100CT | TO-220 | MBR30100CT | Pb-free | Tube | 1000/box |
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