75A 650V 34mm Half Bridge IGBT Module

• Manufacturing Technology: Trench and Fieldstop Technology Design
• Material: Compound Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DGA75H65M2T
• Package: 34mm
• Application: Welding, UPS
• Model: Dga75h65m2t
• Batch Number: 2023
• Brand: Wxdh
• Voltage: 650V
• Current: 75A
• Transport Package: Box
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 59.00cm * 24.00cm * 15.00cm
• Package Gross Weight: 20.000kg

Product Description

1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.

 

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	650		V
Gate- Emitter Voltage		VGES	±30		V
DC Collector current		IC(T=25ºC)	150		A
DC Collector current		(Tc=100ºC)	75		A
Pulsed Collector Current		ICM	300		A
Max Power Dissipation	TC=25ºC	PD	500		W
Thermal Resistance Junction to Case storage Temperature		Tj	150		ºC
		Tstg	-55~150		ºC

 

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 1.9V
@ I_C =40A and V_GE=15V

Extremely enhanced avalanche capability

Applications

Welding

Three-leve Inverter

UPS

AC and DC servo drive amplifier