| Manufacturing Technology: | Discrete Device |
|---|---|
| Material: | Silicon |
| Type: | P-type Semiconductor |
| Package: | to-220 |
| Application: | Switching Power Supply |
| Model: | Mbr10100CT |
| Samples: |
|---|
| Customization: |
|---|
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| SYMBOL | RATING | |
| VBR (V) | Min 100 | typ 121 |
| IR(uA)25ºC | max 20 | |
| VF (V) 25ºC | typ. 0.79 | max 0.85 |
| IF(A) Single chip package | 5 | |
| IF(A) Dual chip package | 10 | |
| Features |
| High junction temperature capabiliy |
| Low leakage current |
| Low thermal resistance |
| High frequency operation |
| Avalanche specification |
| Applications |
| Switching Power Supply |
| Power Switching Circuits |
| General Purpose |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| MBR10100CT | TO-220C | MBR10100CT | Pb-free | Tube | 1000/box |
| MBRF10100CT | TO-220F | MBRF10100CT | Pb-free | Tube | 1000/box |
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