11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Package: to-220f
• Application: Power Supply
• Model: Dhfsj11n65
• Model NO.: DHFSJ11N65
• Batch Number: 2021
• Brand: Wxdh
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65	DHFSJ11N65
Drian-to-Source Voltage		VDSS	650		V
Gate-to-Source Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	11		A
		(T=100ºC)	7		A
Drain Current(Pulsed)		IDM	33		A
Single Pulse Avalanche Energy		EAS	280		mJ
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	121	32.7	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Low switching loss

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Power factor correction(PFC).

Switched mode power supplies(SMPS).

Uninterruptible power supply(UPS).

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHSJ11N65	TO-220	DHSJ11N65	Pb-free	Tube	1000/box
DHFSJ11N65	TO-220F	DHFSJ11N65	Pb-free	Tube	1000/box
DHBSJ11N65	TO-251	DHBSJ11N65	Pb-free	Tube	3000/box
DHDSJ11N65	TO-252	DHDSJ11N65	Pb-free	Tape & Reel	2500/box
DHISJ11N65	TO-262	DHISJ11N65	Pb-free	Tube	1000/box
DHESJ11N65	TO-263	DHESJ11N65	Pb-free	Tape & Reel	800/box