• 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
  • 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
  • 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
  • 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
  • 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
  • 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247

36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247

Manufacturing Technology: Discrete Device
Material: Sic
Type: N-type Semiconductor
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
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Sic Power Mosfet
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36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 pictures & photos
36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

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Manufacturer/Factory & Trading Company

Basic Info.

Model NO.
DHC1M080120W
Package
to-247
Application
Solar Inverters
Model
Dhc1m080120W
Batch Number
2022
Brand
Wxdh
Voltage
1200V
Current
36A
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-24736A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-24736A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-24736A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
 36A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL VALUE UNIT
     
Drian-to-Source Voltage VDSS 1200 V
Gate-to-Source Voltage max VGSS -10/+25 V
Gate-to-Source Voltage max VGSS -5/+20 V
Continuous Drain Current ID TC=25ºC 36 A
TC=100ºC 24 A
Pulsed Drain Current IDM 80 A
Power Dissipation Tj=150ºC Ptot 192 W
TC=25ºC Ptot W
Junction Temperature Range Tj -55~150 ºC
Storage Temperature Range Tstg -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.6 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHC1M080120N TO-3PN DHC1M080120N Pb-free Tube 300/box
DHC1M080120W TO-247 DHC1M080120W Pb-free Tube 300/box
 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247

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From payment to delivery, we protect your trading.
36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 pictures & photos
36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07