| Customization: | Available |
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| Manufacturing Technology: | Discrete Device |
| Type: | N-Type Semiconductor |
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| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Drian-to-Source Voltage | VDSS | 150 | V | ||
| Gate-to-Source Voltage | VGSS | ±20 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 85 | A | ||
| (T=100ºC) | 60 | A | |||
| Drain Current(Pulsed) | IDM | 340 | A | ||
| Single Pulse Avalanche Energy | EAS | 420 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 1.25 | W | |
| TC=25ºC | Ptot | 120 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Low on resistance |
| Low gate charge |
| High avalanche current |
| Fast switching |
| Low reverse transfer capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
| Motor control and drive |
| Battery management |
| UPS(Uninterrupible Power Supplies) |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHS110N15D | TO-252B | DHS110N15D | Pb-free | Tube | 5000/box |
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