


100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
| Features |
| Fast Switching |
| Low ON Resistance(Rdson≤0.55mΩ) |
| Low Gate Charge(Typ: 43nC) |
| Low Reverse Transfer Capacitances(Typ: 215pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
| Inverter management system |
| Electric Tools |
| Automotive Electronics |
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| 30H10K |
| Maximum Drian-Source DC Voltage |
VDS |
30 |
V |
| Maximum Gate-Drain Voltage |
VGS |
±20 |
V |
| Drain Current(continuous) |
ID(T=25ºC) |
100 |
A |
| (T=100ºC) |
70 |
A |
| Drain Current(Pulsed) |
IDM |
280 |
A |
| Single Pulse Avalanche Energy |
EAS |
200 |
mJ |
| Total Dissipation |
Ta=25ºC |
Ptot |
2 |
W |
| TC=25ºC |
Ptot |
60 |
W |
| Junction Temperature |
Tj |
-55~150 |
ºC |
| storage Temperature |
Tstg |
-55~150 |
ºC |
| Product Specifications and Packaging Models |
| Product Model |
Package Type |
RoHS |
Package |
Quantity |
| 30H10K |
TO-252 |
Pb-free |
Reel |
2500/Reel;5000/small box;25000/big box |