100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

Product Details
Customization: Available
Application: Power Switching, Inverter, Electric Tools
Batch Number: 2021
Still deciding? Get samples of US$ 0.15/Piece
Order Sample
Shipping & Policy
Shipping Cost: Contact the supplier about freight and estimated delivery time.
Payment Methods:
visa mastercard discover JCB diners club american express T/T
PIX SPEI OXXO PSE OZOW
  Support payments in USD
Secure payments: Every payment you make on Made-in-China.com is protected by the platform.
Refund policy: Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Manufacturer/Factory & Trading Company

360° Virtual Tour

Secured Trading Service
Diamond Member Since 2021

Suppliers with verified business licenses

Audited Supplier

Audited by an independent third-party inspection agency

Number of Employees
234
Year of Establishment
2004-12-07
  • 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
  • 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
  • 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
  • 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
  • 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
  • 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
Find Similar Products

Basic Info.

Model NO.
30H10K
Manufacturing Technology
Discrete Device
Material
Metal-Oxide Semiconductor
Model
30h10K
Package
to-252b
Type
N-Type
Voltage
30V
Current
100A
Brand
Wxdh
Transport Package
Tape, Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
 
Features
Fast Switching
Low ON Resistance(Rdson≤0.55mΩ)
Low Gate Charge(Typ: 43nC)
Low Reverse Transfer Capacitances(Typ: 215pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter management system
Electric Tools
Automotive Electronics
 
PARAMETER SYMBOL VALUE UNIT
30H10K
Maximum Drian-Source DC Voltage VDS 30 V
Maximum Gate-Drain Voltage VGS ±20 V
Drain Current(continuous) ID(T=25ºC) 100 A
(T=100ºC) 70 A
Drain Current(Pulsed) IDM 280 A
Single Pulse Avalanche Energy EAS 200 mJ
Total Dissipation Ta=25ºC Ptot 2 W
TC=25ºC Ptot 60 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Product Specifications and Packaging Models
Product Model Package Type RoHS Package Quantity
30H10K TO-252 Pb-free Reel 2500/Reel;5000/small box;25000/big box
 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now
Contact Supplier