100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
Features |
Fast Switching |
Low ON Resistance(Rdson≤0.55mΩ) |
Low Gate Charge(Typ: 43nC) |
Low Reverse Transfer Capacitances(Typ: 215pF) |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications |
Inverter management system |
Electric Tools |
Automotive Electronics |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
30H10K |
Maximum Drian-Source DC Voltage |
VDS |
30 |
V |
Maximum Gate-Drain Voltage |
VGS |
±20 |
V |
Drain Current(continuous) |
ID(T=25ºC) |
100 |
A |
(T=100ºC) |
70 |
A |
Drain Current(Pulsed) |
IDM |
280 |
A |
Single Pulse Avalanche Energy |
EAS |
200 |
mJ |
Total Dissipation |
Ta=25ºC |
Ptot |
2 |
W |
TC=25ºC |
Ptot |
60 |
W |
Junction Temperature |
Tj |
-55~150 |
ºC |
storage Temperature |
Tstg |
-55~150 |
ºC |
Product Specifications and Packaging Models |
Product Model |
Package Type |
RoHS |
Package |
Quantity |
30H10K |
TO-252 |
Pb-free |
Reel |
2500/Reel;5000/small box;25000/big box |