150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263

Product Details
Customization: Available
Application: Switching Mode Power Supplies
Batch Number: 2023
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Number of Employees
234
Year of Establishment
2004-12-07
  • 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
  • 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
  • 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
  • 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
  • 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
  • 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
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Basic Info.

Model NO.
DHS042N15E
Manufacturing Technology
Discrete Device
Material
Silicon
Model
Dhs042n15e
Package
to-220
Type
N-Type Semiconductor
Voltage
150V
Current
150A
Brand
Wxdh
Transport Package
Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541100000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263
 8A 650V SIC SchottkyBarrierDiode
1 Description
SIC Series products family offers state of the art performance. It is designed for high
frequency applications where high efficiency and high reliability are required.

 
Features
Low on resistance
Low gate charge
Fast switching
Low reverse transfer capacitances
100% single pulse avalanche energy test
100% ΔVDS test
AEC-Q101 qualified
Applications
Motor Control and Drive
Battery management
UPS (Uninterrupible Power Supplies)

 Marking &packing information
Part #
Package
Marking
Tube/Reel
Qty(pcs)
DHS042N15E
TO-263
DHS042N15E
REEL
800/box
 
PARAMETER SYMBOL VALUE UNIT
 
Drain-source voltage
VDS
150 V
Gate-Source voltage
VGS
±20
V
Continuous drain current
TC = 25°C
I
150 A
TC = 100°C
106 A
Pulsed drain current (TC = 25°C, tp limited by Tjmax)
IDM
600 A
Avalanche energy, single pulse (L=0.5mH, Rg=25)
EAS
1406 MJ
Power dissipation (TC = 25°C)
Ptot
3 W
Operating junction and storage temperature
Tj , T stg
-55~175 ºC
 
 150A 150V N-Channel Enhancement Mode Power Mosfet Dhs042n15e to-263

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