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Insulated Gate Bipolar Transistor IGBT G60t65D to-3p

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  • 6 yrs

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Product Highlights

  • High Current Capacity: Collector current up to 120A at 25C and 60A at 100C.
  • Advanced Trench Technology: Features FS Trench Technology for improved performance.
  • Low Saturation Voltage: Typical VCE(sat) of 1.85V at IC=60A and VGE=15V.
  • Wide Operating Temperature: Junction temperature up to 150C and storage from -55C to 150C.
  • OEM and ODM Services: Custom manufacturing services available for specific needs.
  • RoHS Compliant: Product meets RoHS environmental standards.
  • High Switching Frequency: Suitable for medium and high switching frequency inverters.
  • Positive Temperature Coefficient: Ensures stable operation under varying thermal conditions.

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Product Images of Insulated Gate Bipolar Transistor IGBT G60t65D to-3p

Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p pictures & photos
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p pictures & photos
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p pictures & photos
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p pictures & photos
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p pictures & photos
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p pictures & photos
Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
    Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
    Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
    Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
    Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
    Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
  • Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
    Insulated Gate Bipolar Transistor IGBT G60t65D to-3p

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Product Description

Insulated Gate Bipolar Transistor IGBT G60t65D to-3pInsulated Gate Bipolar Transistor IGBT G60t65D to-3pInsulated Gate Bipolar Transistor IGBT G60t65D to-3pInsulated Gate Bipolar Transistor IGBT G60t65D to-3p
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 650 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 120 A
Collector Current  (Tc=100ºC) 60 A
Pulsed Collector Current ICM 180 A
Diode Continuous Forward Current I@TC = 100 °C 30 A
Diode Maximum Forward Current IFM 90 A
Total Dissipation TC=25ºC PD 406 W
TC=100ºC PD 163 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.85V
@ IC =60A and VGE=15V
Applications
Inverter welding machine
Solar inverter
UPS
Medium and high switching frequency inverter
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G60T65D TO-247 G60T65D Pb-free Tube 300/box
 Insulated Gate Bipolar Transistor IGBT G60t65D to-3p

About the Supplier

This supplier has been audited by SGS. Verify the report on the official SGS website with ID "QIP-ASR2441356". Items marked "verified" are certified.

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Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd
Jiangsu Donghai Semiconductor Co.,Ltd

About Our Factory & Business Background

verified Business Type
Manufacturer/Factory & Trading Company
Address
No. 88 Zhongtong Road, Shuofang Industry Park, New District, Wuxi, Jiangsu, China
verified Plant Area
18862 square meters
verified Number of Employees
234
verified Registered Capital
81,500,000 RMB
verified Terms of Payment
LC, T/T, D/P, PayPal, Western Union, Small-amount payment
verified International Commercial Terms(Incoterms)
FOB, CIF, CFR
verified Average Lead Time
Peak Season Lead Time: one month
Off Season Lead Time: one month
verified Nearest Port
Shanghai Port

Our Production Capability & Technical Expertise

verified Main Products
Mosfets, Diodes, IGBT, Transistor, Thyristor, IC, SIC Mosfet, SIC Diode
verified Production Machines
Cutting Machine, Testing and Sorting Machine, Wire Banding Machine, Die Attach Machine, Molding Plastic Machine, Oven
verified ODM Service Available
Yes
verified OEM Service Available
Yes
verified R&D Engineers
35 people
verified Test Reports for Raw Materials
RoHS, Reach
verified Own Brand
Yes

Our Industry Experience & Global Business Record

verified Year of Establishment
2004-12-07
Export Year
2010-03-11
verified Main Markets
South Asia
verified Number of Foreign Trading Staff
2

Our Certifications, Standards & Industry Recognition

verified Management System Certification
IATF16949

FAQ

What is the maximum collector current?
The collector current is 120A at 25C and 60A at 100C.
What is the maximum junction temperature?
The maximum junction temperature is 150C.
Is this product RoHS compliant?
Yes, the product is RoHS compliant.
What packaging is used for this model?
The package type is TO-247, packed in tubes with 300 units per box.
Can you provide OEM or ODM services?
Yes, both OEM and ODM services are available.
What are the typical applications for this IGBT?
It is used in inverter welding machines, solar inverters, UPS, and medium to high switching frequency inverters.
What is the typical saturation voltage?
The typical VCE(sat) is 1.85V at IC=60A and VGE=15V.
What is the lead time for orders?
The average lead time is one month for both peak and off-peak seasons.

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