• 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
  • 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
  • 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
  • 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
  • 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
  • 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c

Manufacturing Technology: Discrete Device
Material: Metal-Oxide Semiconductor
Type: N-type Semiconductor
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
| Order Sample
Mosfet
Customization:
Shipping Cost:

Estimated freight per unit.

about shipping cost and estimated delivery time.
Payment Method: visa mastercard discover JCB diners club american express T/T
  Initial Payment Full Payment
Currency: US$
Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
From payment to delivery, we protect your trading.
160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c pictures & photos
160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company

Basic Info.

Model NO.
DHS044N12
Package
to-220c
Application
Power Switch Circuit
Model
Dhs044n12
Batch Number
2021
Brand
Wxdh
Voltage
120V
Current
160A
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
PARAMETER SYMBOL VALUE UNIT
Drian-to-Source Voltage VDSS 120 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current(continuous) (Tc=25ºC) 180  
(Tc=100ºC) 114 A
Drain Current(Pulsed) IDM 640 A
Single Pulse Avalanche Energy EAS 1290 mJ
Total Dissipation Ta=25ºC Ptot 1.6 W
TC=25ºC Ptot 272 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Synchronous rectification in SMPS
Motor control and drive
Battery management
UPS
Power tools
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DHS044N12
To-220C
DHS044N12
Pb-free PIPE 1000/box
DHS044N12E
TO-263
DHS044N12E
Pb-free REEL 800/box
 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now

You Might Also Like

From payment to delivery, we protect your trading.
160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c pictures & photos
160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07