20mΩ 650V N-channel SiC Power MOSFET
Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required.
Features |
Higher System Efficiency
|
Reduced Cooling Requirements
|
Increased Power Density
|
Increased System Switching Frequency
|
Applications |
Power Supplies |
High Voltage DC/DC Converters |
Motor Drives |
Switch Mode Power Supplies |
Pulsed Power applications |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
Drian-to-Source Voltage |
VDSS |
650 |
V |
Gate-to-Source Voltage max |
VGSS |
-8/+22 |
V |
Gate-to-Source Voltage max |
VGSS |
-4/+18 |
V |
Continuous Drain Current |
VGS=20V,TC=25ºC
|
92 |
A |
VGS=20V,TC=100ºC
|
64 |
A |
Pulsed Drain Current |
ID(PULSE) |
257 |
A |
Power Dissipation |
Tj=175ºC |
PD |
312 |
W |
TC=25ºC |
PD |
W |
Junction Temperature Range |
Tj |
-55~150 |
ºC |
Storage Temperature Range |
Tstg |
-55~150 |
ºC |
4.2 Thermal Characteristics
Parameter |
Symbol |
Rating |
Unitº |
Thermal Resistance,Junction to Case-sink |
RthJC |
0.48 |
ºC/W |
Product Specifications and Packaging Models |
Product Model |
Package Type |
Mark Name |
RoHS |
Package |
Quantity |
DCC020M65G2 |
TO-247-3L |
DCC020M65G2 |
Pb-free |
Tube |
300/box |