4A 800V N-Channel Enhancement Mode Power Mosfet F4n80 to-220f

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: F4N80
• Package: to-220f
• Application: Power Switch Circuit
• Model: F4n80
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 800V
• Current: 4A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			4N80/I4N80/E4N80	F4N80
Drian-Source Voltage		VDSS	800		V
Gate-to-Source Voltage		VGSS	±30		V
Drain Current(continuous)		ID(T=25ºC)	4		A
		(T=100ºC)	2.5		A
Drain Current(Pulsed)		IDM	16		A
Single Pulse Avalanche Energy		EAS	460		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	75	30	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

ESD improved capability

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

LED power switch circuit

Electronic ballast

Electronic transformer

Switch mode power supply

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
4N80	TO-220C	4N80	Pb-free	Tube	1000/box
F4N80	TO-220F	F4N80	Pb-free	Tube	1000/box
I4N80	TO-262	I4N80	Pb-free	Tube	1000/box
E4N80	TO-263	E4N80	Pb-free	Tape & Reel	800/box