8A 500V N-Channel Enhancement Mode Power Mosfet 8n50 to-220c

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: P-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 8N50
• Package: to-220c
• Application: Power Switching Applications
• Model: 8n50
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 500V
• Current: 8A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	VALUE	UNIT
			8N50
Drian-to-Source Voltage		VDSS	500	V
Gate-to-Source Voltage		VGSS	±30	V
Drain Current(continuous)		ID(T=25ºC)	8	A
		(T=100ºC)	5	A
Drain Current(Pulsed)		IDM	32	A
Single Pulse Avalanche Energy		EAS	450	mJ
Total Dissipation	Ta=25ºC	Ptot	0.8	W
	TC=25ºC	Ptot	100	W
Junction Temperature		Tj	-55~150	ºC
storage Temperature		Tstg	-55~150	ºC

 

Features

Fast Switching

ESD improved capability

Low ON Resistance

Low Reverse Transfer Capacitances

Low gate charge(Typ: 24nC)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system

miniaturization and higher efficiency.

Power switch circuit of electron ballast and adaptor.

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
8N50	TO-220C	8N50	Pb-free	PIPE	1000/box