30A 60V Low Vf Schottky Barrier Diode Mbr30r60cts to-220c

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: MBR30R60CTS
• Package: to-220
• Application: Switching Power Supply
• Model: Mbr30r60cts
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 60V
• Current: 30A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541100000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

Features

High junction temperature capabiliy

Low leakage current

Low thermal resistance

High frequency operation

Avalanche specification

Applications

Switching Power Supply

Power Switching Circuits

General Purpose

 

PARAMETER			SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage			VRRM	60	V
RMS Reverse Voltage			VR(RMS)	42	V
DC Blocking Voltage			VR	60	V
Average Rectified Forward Current(single)		TC=120ºC	IF(AV)	15	A
Average Rectified Forward Current(double)				30	A
Repetitive Peak Surge Current(single)			IFRM	25	A
Nonrepetitive Peak Surge Current(single)		t=8.3ms	IFSM	250	A
Junction Temperature			Tj	-50~150	ºC
storage Temperature			Tstg	-65~150	ºC

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
MBR30R60CTS	TO-263	MBR30R60CTS	Pb-free	Braid	800/dic
MBR30R60CTS	TO-220	MBR30R60CTS	Pb-free	Tube	1000/box
MBR30R60DCTS	TO-3P	MBR30R60DCTS	Pb-free	Tube	300/box
MBRF30R60CTS	TO-220F	MBRF30R60CTS	Pb-free	Tube	1000/box