Customization: | Available |
---|---|
Manufacturing Technology: | Discrete Device |
Type: | N-type Semiconductor |
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Features |
Low power loss, |
high efficiency Low forward voltage, |
high current capability High surge capacity |
Super fast recovery times |
high voltage |
Applications |
Switching Power Supply |
Power Switching Circuits |
General Purpose |
PARAMETER | SYMBOL | VALUE | UNIT | ||
Peak Repetitive Reverse Voltage | VRRM | 1200 | V | ||
RMS Reverse Voltage | VR(RMS) | 1200 | V | ||
DC Blocking Voltage | VR | 1200 | V | ||
Average Rectified Forward Current(single) | TO-220F, TC=100ºC | IF(AV) | 15 | A | |
Average Rectified Forward Current(double) | TO-220C,TC=120ºC | IF(AV) | 15 | A | |
Repetitive Peak Surge Current(single) | IFRM | 30 | A | ||
Nonrepetitive Peak Surge Current(single) | t=8.3ms | IFSM | 170 | A | |
Avalanche Energy(single) | L=1mH | EAS | 13 | mJ | |
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MUR15FU120 | TO-220C-2L | MUR15FU120 | Pb-free | Tube | 1000/box |
MURF15FU120 | TO-220F-2L | MURF15FU120 | Pb-free | Tube | 1000/box |