100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F
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Product Highlights
- Advanced Trench Technology: Provides excellent Rdson and low gate charge for high efficiency.
- RoHS Compliant: Accords with RoHS standard for environmental safety.
- Fast Switching Speed: Features fast switching and low reverse transfer capacitance.
- Robust Avalanche Energy: 100% single pulse avalanche energy test ensures reliability.
- OEM/ODM Services: Custom brand options and manufacturing services available.
- Multiple Package Options: Available in TO-220C, TO-220F, TO-251, TO-252, TO-262, and TO-263.
Product Attributes
- Customization
- Available
- Application
- Power Switching, Converters, Full Bridge Control
- Batch Number
- 2021
- Model NO.
- DH100N06F
- Manufacturing Technology
- Discrete Device
- Material
- Metal-Oxide Semiconductor
- Model
- Dh100n06f
- Package
- to-220f
- Type
- N-Type Semiconductor
- Brand
- Wxdh
- Transport Package
- by Sea, Packing
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
Shipping
- Shipping Cost:
- Contact the supplier about freight and estimated delivery time.
Online Trading Protection
- Payment Guarantee
-
Platform-protected payments with refund support for eligible order issues.
- Platform Logistics
- Clearer shipment tracking with platform-supported logistics.
- Inspection Service
- Optional pre-shipment inspection for quality and quantity checks.
- After-Sales & Dispute Handling
- Platform-assisted dispute resolution, including refunds or returns when applicable.
Only orders placed and paid through Made-in-China.com Secured Trading are eligible for payment protection and the corresponding platform services.
Product Images of 100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F
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100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F -
100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F -
100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F -
100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F -
100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F -
100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F -
100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F
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Product Description
| Description |
| These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. |
| Features |
| Low on resistance |
| Low gate charge |
| Fast switching |
| Low reverse transfer capacitances |
| 100% single pulse avalanche energy test |
| 100% ΔVDS test |
| Applications |
| Power switching applications |
| DC-DC converters |
| Full bridge control |
| PARAMETER | SYMBOL | RATING | UNIT | ||
| DH100N06/DHI100N06/DHE100N06/DHB100N06/DHD100N06 | DHF100N06 | ||||
| Drian-to-Source Voltage | VDSS | 68 | V | ||
| Gate-to-Source Voltage | VGSS | ±20 | V | ||
| Continuous Drain Current | ID TC=25ºC | 100 | A | ||
| TC=100ºC | 70 | A | |||
| Pulsed Drain Current | IDM | 400 | A | ||
| Single Pulse Avalanche Energy | EAS | 600 | mJ | ||
| Power Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 145 | 35 | W | |
| Isolation Voltage | VISO | / | 2500 | V | |
| Junction Temperature Range | Tj | -55~175 | ºC | ||
| Storage Temperature Range | Tstg | -55~175 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DH100N06 | TO-220C | DH100N06 | Pb-free | Tube | 1000/box |
| DHF100N06 | TO-220F | DHF100N06 | Pb-free | Tube | 1000/box |
| DHB100N06 | TO-251 | DHB100N06 | Pb-free | Tube | 3000/box |
| DHD100N06 | TO-252 | DHD100N06 | Pb-free | Tape & Reel | 2500/box |
| DHI100N06 | TO-262 | DHI100N06 | Pb-free | Tube | 1000/box |
| DHE100N06 | TO-263 | DHE100N06 | Pb-free | Tape & Reel | 800/box |
About the Supplier
This supplier has been audited by SGS. Verify the report on the official SGS website with ID "QIP-ASR2441356". Items marked "
" are certified.
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Company Profile
Jiangsu Donghai Semiconductor Co., Ltd. Was founded in December 2004 and is headquartered in Wuxi, China. With a registered capital of RMB 81.5 million, the company has more than 230 employees, including over 60 R&D and technical professionals.
Donghai Semiconductor focuses on the R&D, design, packaging, testing and application solutions of power semiconductor devices. Our product portfolio includes SiC MOSFET/SBD, IGBT discrete/module, SGT/Trench MOSFET, HV SJ/Planar MOSFET, FRD and SBD etc.
We operate our own packaging line and offer a wide range of discrete and module packages, including TO-251, TO-252, TO-262, TO-263, TO-220/220F, TO-247/TO-247Plus, TO-3P series, DFN, TOLL, sTOLL, TOLT, QDPAK, HU3PAK, as well as MA-ME power module packages.
And we have also established four in-house laboratories for device characterization, reliability testing, application testing and failure analysis. Backed by these capabilities, our products have already entered mass production and are widely used in PV, ESS, EV/charging, industrial drives, welding equipment, AI servers, robotics and other high-efficiency power applications.
Donghai Semiconductor has obtained over 250 authorized patents, including more than 50 invention patents. We are recognized as a National High-Tech Enterprise and a National-level Specialized and Sophisticated "Little Giant" Enterprise. And we also operate two provincial-level R&D centers-the Jiangsu Provincial Enterprise Technology Center and the Jiangsu Engineering Technology Research Center for Automotive Power Devices. These qualifications and R&D platforms are officially recognized by relevant national and provincial government authorities in China, reflecting our strong capabilities in technological innovation, specialized development and industrialization.
Corporate Philosophy
Vision:
To become an outstanding provider of power semiconductor products and solutions.
Mission:
Contribute Donghai' s Power for Better Life, for Green Energy
Core Values:
Efficiency, Reliability, Innovation and Collaboration.
Business Philosophy:
Integrity and win-win cooperation.
Service Philosophy:
Customer requirements are our requirements. We create long-term value through reliable products and professional services
About Our Factory & Business Background
-
Business Type
- Manufacturer/Factory & Trading Company
- Address
- No. 88 Zhongtong Road, Shuofang Industry Park, New District, Wuxi, Jiangsu, China
-
Plant Area
- 18862 square meters
-
Number of Employees
- 234
-
Registered Capital
- 81,500,000 RMB
-
Terms of Payment
- LC, T/T, D/P, PayPal, Western Union, Small-amount payment
-
International Commercial Terms(Incoterms)
- FOB, CIF, CFR
-
Average Lead Time
-
Peak Season Lead Time: one month
Off Season Lead Time: one month -
Nearest Port
- Shanghai Port
Our Production Capability & Technical Expertise
- Main Products
- Mosfets, Diodes, IGBT, Transistor, Thyristor
-
Production Machines
- Cutting Machine, Testing and Sorting Machine, Wire Banding Machine, Die Attach Machine, Molding Plastic Machine, Oven
-
ODM Service Available
- Yes
-
OEM Service Available
- Yes
-
R&D Engineers
- 35 people
-
Test Reports for Raw Materials
- RoHS, Reach
-
Own Brand
- Yes
Our Industry Experience & Global Business Record
-
Year of Establishment
- 2004-12-07
- Export Year
- 2010-03-11
-
Main Markets
- South Asia
-
Number of Foreign Trading Staff
- 2
Our Certifications, Standards & Industry Recognition
-
Management System Certification
- IATF16949
FAQ
- Does this product meet RoHS standards?
- Yes, the product accords with the RoHS standard.
- What are the available package types?
- Available packages include TO-220C, TO-220F, TO-251, TO-252, TO-262, and TO-263.
- Is OEM or ODM service available?
- Yes, both OEM and ODM services are available with custom branding options.
- What is the lead time for orders?
- The average lead time is one month for both peak and off-peak seasons.
- What payment terms are accepted?
- Accepted payment terms include LC, T/T, D/P, PayPal, Western Union, and small-amount payments.
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