200V/11mΩ /110A N-Mosfet DSG108n20na to-220c
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Product Details
| Customization: | Available |
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| Manufacturing Technology: | Discrete Device, Discrete Device |
| Type: | N-Type Semiconductor, N-type Semiconductor |
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Diamond Member Since 2021
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Year of Establishment
2004-12-07
Number of Employees
234
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Basic Info.
- Model NO.
- DSG108N20NA
- Voltage
- 200V
- Current
- 110A
- Material
- Metal-Oxide Semiconductor
- Package
- to-220c
- Application
- Power Switch Circuit
- Model
- DSG108n20na
- Batch Number
- 2021
- Brand
- Wxdh
- Transport Package
- Tube
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
- Production Capacity
- 500000000 Pieces/Year
Packaging & Delivery
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | |
| Drian-to-Source Voltage | VDSS | 200 | V | |
| Gate-to-Source Voltage | VGSS | ±20 | V | |
| Drain Current(continuous) | (Tc=25ºC) | 110 | A | |
| (Tc=100ºC) | 78 | A | ||
| Drain Current(Pulsed) | IDM | 440 | A | |
| Single Pulse Avalanche Energy | EAS | 1122 | mJ | |
| Total Dissipation | Ta=25ºC | Ptot | - | W |
| TC=25ºC | Ptot | 333 | W | |
| Junction Temperature | Tj | -55~175 | ºC | |
| storage Temperature | Tstg | -55~175 | ºC | |
| Features |
| Low ON Resistance |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
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Pb-Free plating / Halogen-Free / RoHS compliant
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| Applications |
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Power switching applications
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DC-DC converters
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Full bridge control
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| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
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DSG108N20NA
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To-220C |
DSG108N20NA
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Pb-free | PIPE | 1000/box |
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