40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263

Product Details
Customization: Available
Application: Power Switching
Batch Number: 2021
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Number of Employees
234
Year of Establishment
2004-12-07
  • 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
  • 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
  • 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
  • 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
  • 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
  • 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
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Basic Info.

Model NO.
DSE012N04NA
Material
Metal-Oxide Semiconductor
Model
Dse012n04na
Package
to-263
Type
N-Type Semiconductor
Voltage
40V
Current
200A
Brand
Wxdh
Transport Package
Tape & Reel
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-26340V/0.85mΩ /200A N-Mosfet Dse012n04na to-26340V/0.85mΩ /200A N-Mosfet Dse012n04na to-26340V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
PARAMETER SYMBOL VALUE UNIT
Drian-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS ±20 V
Drain Current(continuous) ID(T=25ºC) 400 A
(T=100ºC) 200 A
Drain Current(Pulsed) IDM 800 A
Single Pulse Avalanche Energy EAS 2209 mJ
Total Dissipation Ta=25ºC Ptot 2.3 W
TC=25ºC Ptot 333 W
Junction Temperature Tj -55~175 ºC
storage Temperature Tstg -55~175 ºC
 
Features
AEC-Q101 qualified
Low on-resistance 
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Pb-free plating/Halogen-Free/Rohs complicant
Applications
Synchronous rectification in SMPS
Charger/ Didcharge for battery Management System
Motor control and  drive
Automotive application
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DSE012N04NA
TO-263
DSE012N04NA
Pb-free REEL 800/box
 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263

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