20A 500V N-Channel Enhancement Mode Power Mosfet 20n50b to-247

• Manufacturing Technology: Discrete Device
• Material: Metal-Oxide Semiconductor
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: 20N50B
• Package: to-247
• Application: Power Switching Circuit
• Model: 20n50b
• Batch Number: 2021
• Brand: Wxdh
• Voltage: 500V
• Current: 20A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Production Capacity: 500000000 Pieces/Year
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

 

PARAMETER		SYMBOL	VALUE		UNIT
			20N50/I20N50/E20N50/20N50B	F20N50
Maximum Drian-Source DC Voltage		VDS	500		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	20		A
		(T=100ºC)	12.5		A
Drain Current(Pulsed)		IDM	80		A
Single Pulse Avalanche Energy		EAS	1200		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	230	45	W
Junction Temperature		Tj	-55~150		ºC
storage Temperature		Tstg	-55~150		ºC

 

Features

Fast Switching

Low ON Resistance(Rdson≤0.3Ω)

Low Gate Charge(Typ: 52nC)

Low Reverse Transfer Capacitances(Typ: 16pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
20N50	TO-220C	20N50	Pb-free	Tube	1000/box
20N50B	TO-247	20N50B	Pb-free	Tube	300/box
F20N50	TO-220F	F20N50	Pb-free	Tube	1000/box
I20N50	TO-262	I20N50	Pb-free	Tube	1000/box
E20N50	TO-263	E20N50	Pb-free	Tape & Reel	800/box