50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D

• Manufacturing Technology: Discrete Device
• Material: Silicon
• Type: N-type Semiconductor
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: DHG50T65D
• Package: to-3pn
• Application: Welding, UPS
• Model: Dhg50t65D
• Batch Number: 2022
• Brand: Wxdh
• Voltage: 650V
• Currency: 50A
• Transport Package: Tube
• Trademark: WXDH
• Origin: Wuxi, China
• HS Code: 8541290000
• Package Size: 50.00cm * 20.00cm * 30.00cm
• Package Gross Weight: 15.000kg

Product Description

PARAMETER		SYMBOL	RATING		UNIT
Collector-Emitter Voltage		VCES	650		V
Gate- Emitter Voltage		VGES	±20		V
Collector Current		IC(T=25ºC)	100		A
Collector Current		(Tc=100ºC)	50		A
Pulsed Collector Current		ICM	150		A
Diode Continuous Forward Current		IF @TC = 100 °C	25		A
Diode Maximum Forward Current		IFM	125		A
Total Dissipation	TC=25ºC	PD	280		W
	TC=100ºC	PD	110		W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

 
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
 

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: VCE(sat),TYP=1.9V @IC=50A,VGE=15V

Extremely enhanced avalanche capability

Applications

welding machine

Solar inverter

UPS

Medium and high switching frequency inverter

 

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G50T65D	TO-3PN	G50T65D	Pb-free	Tube	300/box