Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D

Product Details
Customization: Available
Application: Welding, UPS, Welding, UPS
Batch Number: 2022, 2022
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Number of Employees
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Year of Establishment
2004-12-07
  • Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
  • Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
  • Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
  • Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
  • Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
  • Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
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Basic Info.

Model NO.
DHG50T65D
Certification
RoHS
Manufacturing Technology
Discrete Device, Discrete Device
Material
Silicon, Silicon
Model
Dhg50t65D, Dhg50t65D
Package
to-3pn, to-3pn
Type
N-Type Semiconductor, N-Type Semiconductor
Voltage
650V
Currency
50A
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65DHot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65DHot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65DHot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 650 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 100 A
Collector Current  (Tc=100ºC) 50 A
Pulsed Collector Current ICM 150 A
Diode Continuous Forward Current I@TC = 100 °C 25 A
Diode Maximum Forward Current IFM 125 A
Total Dissipation TC=25ºC PD 280 W
TC=100ºC PD 110 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC
 
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat),TYP=1.9V @IC=50A,VGE=15V
Extremely enhanced avalanche capability
Applications
welding machine
Solar inverter
UPS
Medium and high switching frequency inverter
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G50T65D TO-3PN G50T65D Pb-free Tube 300/box
 Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D

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