7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220
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Product Highlights
- High Voltage Rating: Maximum Drain-Source DC Voltage up to 600V for robust power switching.
- Fast Switching Speed: Optimized for system miniaturization and higher efficiency in power circuits.
- ESD Improved Capability: Enhanced Electrostatic Discharge protection for reliable operation.
- OEM/ODM Services: Customization available with 35 R&D engineers and full manufacturing support.
- RoHS Compliant: All models are Pb-free and meet RoHS environmental standards.
Product Attributes
- Customization
- Available
- Application
- Power Switching Circuit
- Batch Number
- 2021
- Model NO.
- 7N60
- Manufacturing Technology
- Discrete Device
- Material
- Silicon
- Model
- 7n60
- Package
- to-220
- Type
- N-Type Semiconductor
- Voltage
- 600V
- Current
- 7A
- Brand
- Wxdh
- Transport Package
- Tube
- Trademark
- WXDH
- Origin
- Wuxi, China
- HS Code
- 8541290000
- Production Capacity
- 500000000 Pieces/Year
- Package Size
- 50.00cm * 20.00cm * 30.00cm
- Package Gross Weight
- 15.000kg
Shipping
- Shipping Cost:
- Contact the supplier about freight and estimated delivery time.
Online Trading Protection
- Payment Guarantee
-
Platform-protected payments with refund support for eligible order issues.
- Platform Logistics
- Clearer shipment tracking with platform-supported logistics.
- Inspection Service
- Optional pre-shipment inspection for quality and quantity checks.
- After-Sales & Dispute Handling
- Platform-assisted dispute resolution, including refunds or returns when applicable.
Only orders placed and paid through Made-in-China.com Secured Trading are eligible for payment protection and the corresponding platform services.
Product Images of 7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220
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7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 -
7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 -
7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 -
7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 -
7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 -
7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220 -
7A 600V N-Channel Enhancement Mode Power MOSFET 7N60 TO-220
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Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 7N60/I7N60/E7N60/B7N60/D7N60 | F7N60 | ||||
| Maximum Drian-Source DC Voltage | VDS | 600 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 7 | A | ||
| (T=100ºC) | 4.4 | A | |||
| Drain Current(Pulsed) | IDM | 28 | A | ||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 100 | 35 | W | |
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| ESD Improved Capability |
| Low ON Resistance(Rdson≤1.3Ω) |
| Low Gate Charge(Typ: 24nC) |
| Low Reverse Transfer Capacitances(Typ: 5.5pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 7N60 | TO-220C | 7N60 | Pb-free | Tube | 1000/box |
| F7N60 | TO-220F | F7N60 | Pb-free | Tube | 1000/box |
| B7N60 | TO-251 | B7N60 | Pb-free | Tube | 1000/box |
| D7N60 | TO-252 | D7N60 | Pb-free | Tape & Reel | 2500/box |
| I7N60 | TO-262 | I7N60 | Pb-free | Tube | 1000/box |
| E7N60 | TO-263 | E7N60 | Pb-free | Tape & Reel | 800/box |
About the Supplier
This supplier has been audited by SGS. Verify the report on the official SGS website with ID "QIP-ASR2441356". Items marked "
" are certified.
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Company Profile
Jiangsu Donghai Semiconductor Co., Ltd. Was founded in December 2004 and is headquartered in Wuxi, China. With a registered capital of RMB 81.5 million, the company has more than 230 employees, including over 60 R&D and technical professionals.
Donghai Semiconductor focuses on the R&D, design, packaging, testing and application solutions of power semiconductor devices. Our product portfolio includes SiC MOSFET/SBD, IGBT discrete/module, SGT/Trench MOSFET, HV SJ/Planar MOSFET, FRD and SBD etc.
We operate our own packaging line and offer a wide range of discrete and module packages, including TO-251, TO-252, TO-262, TO-263, TO-220/220F, TO-247/TO-247Plus, TO-3P series, DFN, TOLL, sTOLL, TOLT, QDPAK, HU3PAK, as well as MA-ME power module packages.
And we have also established four in-house laboratories for device characterization, reliability testing, application testing and failure analysis. Backed by these capabilities, our products have already entered mass production and are widely used in PV, ESS, EV/charging, industrial drives, welding equipment, AI servers, robotics and other high-efficiency power applications.
Donghai Semiconductor has obtained over 250 authorized patents, including more than 50 invention patents. We are recognized as a National High-Tech Enterprise and a National-level Specialized and Sophisticated "Little Giant" Enterprise. And we also operate two provincial-level R&D centers-the Jiangsu Provincial Enterprise Technology Center and the Jiangsu Engineering Technology Research Center for Automotive Power Devices. These qualifications and R&D platforms are officially recognized by relevant national and provincial government authorities in China, reflecting our strong capabilities in technological innovation, specialized development and industrialization.
Corporate Philosophy
Vision:
To become an outstanding provider of power semiconductor products and solutions.
Mission:
Contribute Donghai' s Power for Better Life, for Green Energy
Core Values:
Efficiency, Reliability, Innovation and Collaboration.
Business Philosophy:
Integrity and win-win cooperation.
Service Philosophy:
Customer requirements are our requirements. We create long-term value through reliable products and professional services
About Our Factory & Business Background
-
Business Type
- Manufacturer/Factory & Trading Company
- Address
- No. 88 Zhongtong Road, Shuofang Industry Park, New District, Wuxi, Jiangsu, China
-
Plant Area
- 18862 square meters
-
Number of Employees
- 234
-
Registered Capital
- 81,500,000 RMB
-
Terms of Payment
- LC, T/T, D/P, PayPal, Western Union, Small-amount payment
-
International Commercial Terms(Incoterms)
- FOB, CIF, CFR
-
Average Lead Time
-
Peak Season Lead Time: one month
Off Season Lead Time: one month -
Nearest Port
- Shanghai Port
Our Production Capability & Technical Expertise
- Main Products
- Mosfets, Diodes, IGBT, Transistor, Thyristor
-
Production Machines
- Cutting Machine, Testing and Sorting Machine, Wire Banding Machine, Die Attach Machine, Molding Plastic Machine, Oven
-
ODM Service Available
- Yes
-
OEM Service Available
- Yes
-
R&D Engineers
- 35 people
-
Test Reports for Raw Materials
- RoHS, Reach
-
Own Brand
- Yes
Our Industry Experience & Global Business Record
-
Year of Establishment
- 2004-12-07
- Export Year
- 2010-03-11
-
Main Markets
- South Asia
-
Number of Foreign Trading Staff
- 2
Our Certifications, Standards & Industry Recognition
-
Management System Certification
- IATF16949
FAQ
- What is the maximum drain-source voltage?
- The maximum Drain-Source DC Voltage (VDS) is 600V.
- Is this MOSFET suitable for power switching circuits?
- Yes, it is designed for various power switching circuits to achieve system miniaturization and higher efficiency.
- What package types are available?
- Available packages include TO-220, TO-220F, TO-251, TO-252, TO-262, and TO-263.
- Does the product support OEM or ODM services?
- Yes, both OEM and ODM services are available.
- Are the products RoHS compliant?
- Yes, all models are Pb-free and comply with RoHS standards.
- What is the typical gate charge?
- The typical gate charge is 24nC.
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